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BC817-40W NPN BJT Transistor SOT-323
BC817-40W NPN BJT Transistor SOT-323
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Product Overview
The BC817-40W is a versatile NPN bipolar junction transistor (BJT) manufactured by Slkor, housed in compact SOT-323 surface-mount package. It features collector-emitter breakdown voltage \(V_{(BR)CEO}\) of 45 V and collector-base breakdown voltage \(V_{(BR)CBO}\) of 50 V. With wide DC current gain range and minimum transition frequency of 100 MHz, this transistor delivers stable performance for general-purpose signal amplification and switching operations in space-constrained electronic designs.
Product Advantages
Wide DC current gain: hFE ranges from 100 to 600 @ Ic=100mA, minimum 40 @ Ic=500mA for reliable signal amplification.
Low cut-off leakage current: ICBO and IEBO maximum 0.1 μA, reducing static power consumption. - Moderate transition frequency fT up to 100 MHz, suitable for medium-frequency applications.
Compact SOT-323 surface-mount package, ideal for high-density PCB layouts.
Product Characteristics
- Collector-Base Breakdown Voltage (\(V_{(BR)CBO}\)): 50 V (IC=10 μA, IE=0)
- Collector-Emitter Breakdown Voltage (\(V_{(BR)CEO}\)): 45 V (IC=10 mA, IB=0)
- Emitter-Base Breakdown Voltage (\(V_{(BR)EBO}\)): 5 V (IE=1 μA, IC=0) - Collector Cut-off Current (ICBO): Max 0.1 μA (VCB=20 V, IE=0)
- Emitter Cut-off Current (IEBO): Max 0.1 μA (VEB=5 V, IC=0)
- DC Current Gain (hFE): 100-600 @ VCE=1 V, IC=100 mA; Min 40 @ VCE=1 V, IC=500 mA
- Collector-Emitter Saturation Voltage (VCE(sat)): Max 0.7 V (IC=500 mA, IB=50 mA)
- Base-Emitter Saturation Voltage (VBE(sat)): Max 1.2 V (IC=500 mA, IB=50 mA)
- Transition Frequency (fT): Min 100 MHz (VCE=5 V, IC=10 mA)
- Collector Output Capacitance (Cob): Max 5 pF - Package: SOT-323
Applications
- Switching Circuits: Provides efficient switching performance for small-to-medium current loads.
- Signal Amplification: Effectively amplifies signals for audio and medium
- frequency electronic circuits. - Power Management: Used in drive circuits of power supply modules and batter
- powered devices.
- Portable Electronics: Well-suited for compact consumer electronics requiring SOT-323 surface-mount devices.
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
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ShenzhenSLKORMicroSemiconCo., Ltd.
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