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2SC3356R25 NPN Bipolar Transistor SOT-23
The 2SC3356 is an ultra-high frequency low-noise transistor utilizing planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and excellent current characteristics.Packaged in SOT-23 SMD format, it is primarily used in VHF, UHF, and CATV broadband low-noise amplifiers.
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Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The 2SC3356 is an ultra-high frequency low-noise transistor utilizing planar NPN silicon epitaxial bipolar technology. It features high power gain, low noise figure, wide dynamic range, and excellent current characteristics.Packaged in SOT-23 SMD format, it is primarily used in VHF, UHF, and CATV broadband low-noise amplifiers.
FEATURES
● High gain: |S21e|2 typical value is 12 dB,@ VCE=10V, IC=20mA, f=1GHz.
● Low noise: NF typical value is 1.5dB,@ VCE=10V, IC=7mA, f=1GHz
● Gain bandwidth product: fT typical value is 7GHz, @ VCE=10V, IC=20mA, f=1GHz
Application
● Signal Amplification: Ideal for low-current signal amplification in compact electronic devices.
● Switching Circuits: Perfect for low-power switching applications requiring small size and reliable performance.
● Consumer Electronics: Suitable for use in portable devices where high-frequency operation and minimal space are crucial.
● RF Applications: Effective for radio frequency circuits where compactness and high-frequency response are important.
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ShenzhenSLKORMicroSemiconCo., Ltd.
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