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BFG540/X RF Power Amplifier SOT-143B
Made with the silicon epitaxy technology, the chip has characteristics such as high power gains, low noise factor, wide inversion frequency, low leakage current, gold material leading structure and high reliability;
BFG520/XR Epitaxial Silicon Transistor SOT-143R
● The chip is manufactured with the silicon epitaxy process, with characteristics such as high power gain, broadband, low noise, low leakage current and small junction capacity; in addition, it has relatively large dynamic ranges and ideal current linear features;
● It is mainly applied to ultrahigh-frequency microwave, VHF, UHF and CATV highfrequency broad-band low-noise amplifiers, such as satellite television tuners, CATV amplifiers, analog digital cordless telephones, high-frequency amplifiers in radio frequency modules and optical modules;
● Collector-emitter breakdown voltage: BVCEO=15V, maximum collector current: IC=70mA, collector power dissipation: PC=300mW, characteristic frequency: fT=9GHz;
amplifiers in radio frequency modules and optical modules;
● The SOT143B or SOT143R surface of the pins (the wide collector pin and the dualemitter pin) is pasted with plastic package;
● ON4973/X and BFG520/X have the same performance, package and silk screen printing, with only difference in models on tags.
BFG425W-TOB NPN Bipolar Transistor SOT-343R
Vceo:4.5V
Ic:100nA
Pd:135mW
VCE:-
fT:25GHz
Working temperature:150℃@(Tj)
ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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Email:
slkoric@slkormicro.com
Whatsapp:+8618073002950
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+86 755 83044319
Building T2, Lijincheng Industrial Center, Jihua Road, Longhua District,Shenzhen,518109,China
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