Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description
● The chip is manufactured with the silicon epitaxy process, with characteristics such as high power gain, broadband, low noise, low leakage current and small junction capacity; in addition, it has relatively large dynamic ranges and ideal current linear features;
● It is mainly applied to ultrahigh-frequency microwave, VHF, UHF and CATV highfrequency broad-band low-noise amplifiers, such as satellite television tuners, CATV amplifiers, analog digital cordless telephones, high-frequency amplifiers in radio frequency modules and optical modules;
● Collector-emitter breakdown voltage: BVCEO=15V, maximum collector current: IC=70mA, collector power dissipation: PC=300mW, characteristic frequency: fT=9GHz;
amplifiers in radio frequency modules and optical modules;
● The SOT143B or SOT143R surface of the pins (the wide collector pin and the dualemitter pin) is pasted with plastic package;
● ON4973/X and BFG520/X have the same performance, package and silk screen printing, with only difference in models on tags.

Features:

Applications:
The BFG520/XR transistor finds application in various high-frequency electronic circuits, including: