Slkor TIP122 NPN Darlington Transistor: 100V 5A TO‑220 Power‑Switching Transistor

TIP122 is an NPN Darlington power transistor manufactured by Slkor. Housed in TO-220 through-hole package, it delivers high DC current gain and considerable collector-current capability. Designed for general-purpose amplification and low-speed switching applications, this RoHS-compliant component can be adopted for power-circuit designs in industrial and consumer-electronic equipment.

I. Core Product Parameters

Test condition: Ambient temperature at 25℃

1. Collector-Base Voltage: 100V
2. Collector-Emitter Voltage: 100V
3. Emitter-Base Voltage: 5.0V
4. Continuous Collector Current: 5.0A
5. Peak Collector Current: 8.0A
6. Base Current: 120mA
7. Power dissipation: 65W at case temperature of 25℃; 2.0W at ambient temperature of 25℃
8. Thermal resistance (Junction-to-Ambient): 62.5℃/W; Thermal resistance (Junction-to-Case): 1.92℃/W
9. Operating junction and storage temperature range: -65℃ ~ +150℃
10. DC current gain: minimum 1000 (Conditions: VCE=3V, IC=0.5A, 3A)
11. Collector-Emitter sustaining voltage: 100V
12. Collector-Emitter saturation voltage: maximum 2.0V (IC=3A, IB=12mA); maximum 4.0V (IC=5A, IB=20mA)
13. Base-Emitter on-state voltage: maximum 2.5V
14. Collector-Emitter cut-off current: maximum 0.5mA
15. Collector-Base cut-off current: maximum 0.2mA
16. Emitter-Base cut-off current: maximum 2mA
17. Output capacitance: maximum 200pF
18. Typical turn-on time: 0.4μS; Typical turn-off time: 1.2μS
19. Package: TO-220. Pin assignment: B-Base, C-Collector, E-Emitter

II. Core Product Features

1. NPN-type Darlington power transistor with minimum DC current gain of 1000. Large collector-current output can be achieved with low base current.
2. Rated voltage of 100V, continuous collector current up to 5.0A and peak collector current up to 8.0A, suitable for medium-power circuits.
3. TO-220 package allows easy heatsink mounting to improve power-handling capacity. The device meets RoHS compliance requirements.
4. Defined turn-on and turn-off time parameters, optimized for low-speed switching circuits.
5. Wide operating junction and storage temperature range, supporting storage and operation from -65℃ to +150℃.
6. Specified saturation-voltage values. Voltage drop under saturation status shall be considered during circuit design.

III. Main Application Fields

1. General-purpose power amplifier circuits for signal power amplification.
2. Various low-speed switching control circuits for load on-off control.
3. Driving circuits for relays and solenoid valves.
4. Small-scale motor driving and control circuits.
5. Power-control units for industrial equipment and household appliances.

IV. Engineering Design Recommendations

1. Power derating: Power ratings are defined separately for case temperature and ambient temperature. Without external heatsink, design shall follow the 2.0W rating at 25℃ ambient temperature. When heatsink is fitted, reference can be made to the 65W rating under case-temperature condition. Power derating shall be applied for temperatures above 25℃.
2. Voltage and current margin: Sufficient safety margin shall be reserved for actual operating voltage and continuous working current. Do not run continuously at absolute maximum ratings. Peak current is only permitted for short-duration pulse conditions.
3. Thermal management: A suitable heatsink is recommended for high-power working conditions with TO-220 package. Keep junction temperature below the upper limit of 150℃.
4. Switching-speed limitation: This device is targeted for low-speed switching scenarios and is not suitable for high-frequency high-speed switching applications.
5. Cut-off leakage consideration: Take the impact of collector-emitter and collector-base cut-off leakage current into account in circuit design.
6. Pin identification: Confirm pin sequence before soldering. B stands for Base, C for Collector and E for Emitter. Wrong pin connection may cause device damage.

V. Product Summary

TIP122 is an NPN Darlington power transistor in TO-220 package. It features 100V withstand voltage and 5A continuous current with high DC gain, and can drive relatively heavy loads with small base-drive current. It fits general-purpose amplification and low-speed power-switching circuits. Proper thermal treatment and power derating are required in practical use. It is not intended for high-frequency switching. Long-term stable performance can be achieved by designing strictly according to datasheet specifications.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.

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