Slkor BCP68-25 NPN Transistor: 20V Withstand Voltage, 1A, SOT‑223 Medium‑Current Switching and Amplification Transistor

BCP68-25 is an NPN silicon bipolar transistor in SOT-223 surface-mount package. Its maximum DC collector current reaches 1A with collector-emitter withstand voltage of 20V. The hFE rank of this device is 200-300. It delivers medium power dissipation capacity, and is mainly used for general-purpose switching and amplifying circuits under high-current conditions. Featuring a wide operating temperature range and compatibility with surface-mount manufacturing, it can realize signal amplification and circuit switching in low-voltage and medium-high-current scenarios. Derating processing based on package thermal performance shall be completed in hardware design.

1. Core Product Parameters

Test condition: ambient temperature 25℃. All values below refer to absolute maximum ratings and electrical characteristics unless otherwise noted.

1. Package and pin assignment: SOT-223 surface-mount package; Pin 1 Base, Pin 2 Collector, Pin 3 Emitter.
2. Voltage ratings: Collector-Base voltage 32V; Collector-Emitter voltage 20V; Emitter-Base voltage 5V.
3. Current ratings: DC collector current 1A; Peak collector current 2A; Peak base current 200mA.
4. Power and thermal parameters: Total power dissipation 1.35W at 25℃ ambient temperature; Junction-to-ambient thermal resistance 91℃/W; Maximum junction temperature 150℃.
5. Temperature range: Operating temperature from -45℃ to +150℃; Storage temperature from -65℃ to +150℃.
6. Electrical characteristics: Typical collector-emitter saturation voltage 500mV; Typical base-emitter voltage 620mV; Minimum transition frequency 40MHz; DC current gain range 200-300 for rank-25; Maximum collector cut-off current 100nA; Maximum emitter cut-off current 100nA.

2. Core Product Features

1. Strong current-handling capacity: DC maximum collector current is 1A and peak collector current can reach 2A, suitable for medium-high-current surface-mount circuit design.
2. SOT-223 surface-mount package provides moderate heat dissipation performance and supports automatic surface-mount soldering production.
3. BCP68-25 is a high-gain version with DC current gain from 200 to 300 and stable amplification performance.
4. Low saturation voltage brings relatively low power loss under turn-on switching state.
5. Wide operating and storage temperature range, which can work from -45℃ to 150℃ with good environmental adaptability.
6. Complementary matching device is available for push-pull amplifier circuit implementation.

3. Main Application Fields

1. General-purpose switching circuits under high-current conditions, low-side switch control.
2. Medium-high-current signal amplification circuits.
3. Power line switching for consumer electronics and industrial auxiliary control boards.
4. MOSFET driver circuits.
5. Control loops for battery-powered equipment.

4. Engineering Design Recommendations

1. Absolute maximum ratings represent stress upper limits. Voltage, current and power derating is required for long-term operation. Do not continuously operate the device at absolute maximum ratings to avoid permanent damage.
2. The heat dissipation of SOT-223 package depends greatly on PCB copper foil area. Actual power dissipation decreases with rising ambient temperature. Further reduce working current under high-temperature working conditions.
3. For switching applications, configure base driving current properly to ensure full saturation of the transistor. For amplification applications, set reasonable quiescent operating point to prevent saturation.
4. Reverse Emitter-Base voltage shall never exceed 5V, or emitter junction will be damaged by over-voltage.
5. Cut-off leakage current increases significantly under high-temperature conditions. Take leakage current impact into consideration when designing high-impedance circuits.
6. Adopt corresponding complementary PNP device for push-pull circuit, and pay attention to gain matching of paired devices.

5. Product Summary

BCP68-25 is an NPN medium-current silicon transistor in SOT-223 package, featuring 20V withstand voltage and 1A continuous rated collector current. The -25 rank offers DC gain of 200-300 with both switching and amplifying capability for mass surface-mount production. Targeting low-voltage medium-high-current applications, this device is suitable for low-voltage switching, signal amplification, MOSFET driving and other circuits. Due to thermal resistance constraints of the package, actual power capacity depends on PCB heat dissipation conditions. Evaluate power derating, configure proper base drive and reserve sufficient voltage-current margin in hardware design for long-term reliable operation of the device.

About Slkor：

Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.

BCP68-25To Product Page