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MMBT5401T PNP Bipolar Transistor SOT-523

MMBT5401T is a PNP high‑voltage plastic‑encapsulated transistor in a miniature SOT‑523 surface‑mount package. It provides high voltage capability, medium power amplification, and reliable switching performance. It is ideal for compact high‑voltage circuits, signal amplification, and general switching in consumer and industrial electronics.

Our Advantages


  • High voltage rating up to 150V for stable high‑voltage circuit operation
  • Ultra‑small SOT‑523 package saves PCB space for compact designs
  • Complementary with MMBT5551T for push‑pull circuit applications
  • Low saturation voltage and low leakage for high efficiency
  • Wide DC current gain range for stable amplification
  • Tape‑and‑reel packaging supports automated SMT assembly
  • RoHS compliant for global market use

Description


MMBT5401T is a PNP high‑voltage plastic‑encapsulated transistor in a miniature SOT‑523 surface‑mount package. It provides high voltage capability, medium power amplification, and reliable switching performance. It is ideal for compact high‑voltage circuits, signal amplification, and general switching in consumer and industrial electronics.

FEATURES


  • PNP high‑voltage plastic‑encapsulated transistor
  • SOT‑523 ultra‑small surface mount package
  • Complementary to MMBT5551T
  • High voltage: VCBO = −160V, VCEO = −150V, VEBO = −5V
  • Continuous collector current: IC = −600mA
  • DC current gain: hFE = 50–300
  • Transition frequency: fT = 100MHz (typ.)
  • Low saturation voltage VCE(sat)
  • Low leakage current (ICBO, IEBO ≤ 50nA)
  • Power dissipation: PC = 200mW
  • Junction/storage temperature: −55℃ to +150℃
  • Marking: 2L

Applications


  • High‑voltage signal amplification
  • Medium‑power switching circuits
  • Compact consumer electronics
  • Portable battery‑powered devices
  • Sensor and interface control
  • Industrial control modules
  • High‑density PCB circuit designs
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Description
MMBT5401T SOT-523​.pdf
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