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Slkor BCP55-16 NPN Transistor: 60V Withstand Voltage 1A SOT‑223 Audio‑Drive Power Transistor

1. Core Product Parameters
Absolute Maximum Ratings (Ambient Temperature = 25℃)
- Collector-Base Voltage: 60V
- Collector-Emitter Voltage: 60V
- Emitter-Base Voltage: 5V
- Continuous Collector Current: 1A
- Collector Power Dissipation: 1.5W
- Junction-to-Ambient Thermal Resistance: 94℃/W
- Storage Temperature Range: -65℃ ~ +150℃
Electrical Characteristics (Ambient Temperature = 25℃)
- Collector-Base Breakdown Voltage: 60V, test condition at collector current of 0.1mA
- Collector-Emitter Breakdown Voltage: 60V, test condition at collector current of 10mA
- Emitter-Base Breakdown Voltage: 5V, test condition at current of 10μA
- Collector Cut-off Current: maximum 100nA, test condition at base-collector voltage of 30V
- DC Current Gain: rank range from 100-250 under test condition of collector voltage 2V and collector current 150mA; minimum value 25 at collector current 5mA; minimum value 25 at collector current 500mA
- Collector-Emitter Saturation Voltage: maximum 0.5V, test condition at collector current 500mA and base current 50mA
- Base-Emitter Voltage: maximum 1V, test condition at collector voltage 2V and collector current 500mA
- Transition Frequency: minimum 100MHz, test condition at collector voltage 10V, collector current 50mA and test frequency 100MHz
Pin Definition of SOT-223 Package
Pin 1: Base; Pin 2: Collector; Pin 3: Emitter
2. Key Product Features
- Housed in SOT-223 package. It supports 1A continuous collector current and 1.5W power dissipation for medium-and-low-power circuits.
- Low collector-emitter saturation voltage keeps conduction loss at a low level.
- Matched complementary PNP device BCP51-BCP53 series is available for push-pull circuit design.
- DC current gain is sorted by rank. BCP55-16 has gain range of 100-250 with good consistency of amplification performance.
- Transition frequency is no less than 100MHz to meet requirements of medium-and-high-frequency signal processing.
- Wide temperature range. The storage temperature covers -65℃ to 150℃, compatible with various industrial and consumer-electronic temperature conditions.
3. Main Application Fields
- Audio pre-drive circuits and audio power output-stage circuits.
- General-purpose medium-and-low-power signal amplification circuits.
- Medium-and-low-power switch control circuits.
- Push-pull amplifier circuits requiring PNP-NPN complementary pairing.
4. Suggestions for Engineering Design
- Power derating design: The maximum power dissipation of 1.5W is specified under 25℃ ambient temperature. Allowable power dissipation of the device shall be derated when ambient temperature rises. Refer to the power-temperature curve; power-handling capacity drops rapidly when temperature exceeds 120℃.
- Voltage and current margin: Reserve sufficient safety margin for actual operating voltage and current. Do not operate continuously at absolute-maximum-rating points to avoid reliability degradation.
- DC current gain varies with collector current and ambient temperature. Amplification factor will degrade under large-current conditions. This variation shall be considered when designing amplifier circuits.
- Collector cut-off current increases significantly as ambient temperature rises. Pay attention to system influence brought by leakage current under high-temperature conditions.
- For pulse-load conditions, higher power dissipation can be tolerated for short periods. Refer to pulse-load curve according to pulse width and duty cycle; do not directly adopt DC power parameters.
- For saturated switching applications, supply adequate base drive current for reliable saturation of the transistor to reduce conduction loss.
- When complementary-pair design is needed, select corresponding BCP51-BCP53 series PNP transistors for pairing.
5. Product Summary
BCP55-16 is an SOT-223 packaged NPN medium-and-low-power transistor, featuring 60V withstand voltage, 1A continuous current and 1.5W power dissipation. It provides high DC gain, low saturation voltage and matching complementary PNP devices. It is mainly intended for audio-drive output stages, and can also be used for general amplification and switching circuits. In engineering practice, implement power derating, take temperature-induced variations of gain and leakage current into account, and set proper driving conditions to guarantee long-term stable circuit operation.
About Slkor:
Slkor has research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Most of the wafer manufacturing and packaging and testing are carried out within China. The company employs and collaborates with individuals and organizations worldwide, with a laboratory for product performance and reliability testing and a central warehouse located at its headquarters in Shenzhen. Slkor has filed for over a hundred invention patents, offers more than 2,000 product models, and serves over ten thousand customers globally. Its products are exported to countries and regions including Europe, the Americas, Southeast Asia, and the Middle East, making it one of the rapidly growing semiconductor companies in recent years. With well-established management systems and streamlined workflows, Slkor has rapidly enhanced the brand awareness and reputation of its "SLKOR" brand through its outstanding quality and standardized services. Its product range includes three major series: diodes, transistors, and power devices, with recent introductions of new products such as Hall elements and analog devices, expanding its presence in sensors, Risc-v microcontrollers, and other product categories.




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