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SL2301D P-Channel Enhancement MOSFET SOT-23

● Leading trench technology for low RDS(on)

● Low Gate Charge

Description
The SL2301D P-Channel Enhancement MOSFET SOT-23 is designed to meet the demands of modern electronic applications. With robust specifications and efficient operation, this MOSFET is ideal for switching and amplification tasks in various circuits. The device features a maximum drain-source voltage of -20V, a continuous drain current of -2.3A, and a power dissipation of 0.7W, ensuring reliable performance across a wide range of operating conditions.

Features

● Leading trench technology for low RDS(on) 

● Low Gate Charge


Application

● Video monitor

● Power management



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