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US1DF Fast Recovery Rectifier Diode SMAF
This US1DF ultrafast recovery rectifier diode is packaged in SMAF surface-mount form factor. It features a maximum repetitive peak reverse voltage rating (VRRM) of 200 V, with maximum average forward rectified current IF(AV) of 1 A at case temperature 125 °C. Its maximum instantaneous forward voltage drop (VF) is 1.3 V at 1 A forward current. The maximum reverse recovery time (trr) of 75 ns delivers high-speed switching performance. It has maximum DC reverse current (IR) of 5 μA at 25 °C ambient temperature under rated DC blocking voltage. Typical junction capacitance is 15 pF, suited for high-frequency circuit designs. The device can operate within junction temperature range of -55 °C ~ +150 °C.
OUR ADVANTAGE
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
DESCRIPTION
This US1DF ultrafast recovery rectifier diode is packaged in SMAF surface-mount form factor. It features a maximum repetitive peak reverse voltage rating (VRRM) of 200 V, with maximum average forward rectified current IF(AV) of 1 A at case temperature 125 °C. Its maximum instantaneous forward voltage drop (VF) is 1.3 V at 1 A forward current. The maximum reverse recovery time (trr) of 75 ns delivers high-speed switching performance. It has maximum DC reverse current (IR) of 5 μA at 25 °C ambient temperature under rated DC blocking voltage. Typical junction capacitance is 15 pF, suited for high-frequency circuit designs. The device can operate within junction temperature range of -55 °C ~ +150 °C.
FEATURES
● For surface mounted applications
● Low profile SMAF package
● Glass Passivated Chip Junction
● Easy to pick and place
● High efficiency
● Lead free in comply with EU RoHS 2011/65/EU directives
APPLICATIONS
● Power Supply Systems: Ideal for use in power supply units and half-wave rectifier circuits.
● Switching Circuits: Suitable for high-speed switching applications requiring ultrafast recovery performance.
● Surge Protection: Protects sensitive electronic components against reverse voltage transients.
● General-purpose electronics: Used in various consumer and industrial circuits demanding compact SMT rectifiers.
Name
Title
Description
Datasheet
Support
ES1DF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 200V IO(A)： 1A VF(V)： 1V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES1GF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 400V IO(A)： 1A VF(V)： 1.25V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES1JF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 600V IO(A)： null VF(V)： 1.68V IR(A)： 5uA trr(ns)： 35ns Package： SMAF
ES2G Fast Recovery Rectifier Diode SMA
Brand: slkor， VRRM(V)： null IO(A)： null VF(V)： 1.25V IR(A)： 5uA trr(ns)： 35ns Package： SMA
ES2G Fast Recovery Rectifier Diode SMC
Brand: slkor， VRRM(V)： 400V IO(A)： 2A VF(V)： 1.25V IR(A)： 5uA trr(ns)： 35ns Package： SMA
ES2GF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 400V IO(A)： 1A VF(V)： 1.25V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES2JF Fast Recovery Rectifier Diode SMAF
Brand: slkor， VRRM(V)： 600V IO(A)： 1A VF(V)： 1.68V IR(A)： 5μA trr(ns)： 35ns Package： SMAF
ES2JW Fast Recovery Rectifier Diode SOD-123FL
Brand: slkor， VRRM(V)： 600V IO(A)： 2A VF(V)： 1.7V IR(A)： 5μA trr(ns)： 35ns Package： SOD-123FL
ES2M Fast Recovery Rectifier Diode SMA
Brand: slkor， VRRM(V)： 1000V IO(A)： 2A VF(V)： 1.7V IR(A)： 5μA trr(ns)： 75ns Package： SMA
ES3DC Fast Recovery Rectifier Diode SMC
Brand: slkor， VRRM(V)： 200V IO(A)： 3A VF(V)： 1.25V IR(A)： 5μA trr(ns)： 35ns Package： SMC
ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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