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2N7002T N-Channel Power MOSFET SOT-523

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.

Product Introduction

The 2N7002T is an N-Channel Enhancement-Mode MOSFET housed in SOT-523 package. Featuring a drain-source voltage of 60 V and continuous drain current of 0.115 A, this device delivers efficient power conversion within a compact surface-mount package. Its maximum on-state resistance is less than 3 Ω @ VGS=10 V, and it achieves ESD rating of HBM ≥2000 V for enhanced anti-static performance.

Product Features

- N-Channel Enhancement-Mode MOSFET, suitable for compact surface-mount switching applications - Drain-Source Voltage (Vdss): 60 V, supports stable operation for medium-voltage switching circuits - Continuous Drain Current (Id): 0.115 A, ideal for small-signal switching applications - On-state Resistance (RDS(on) @ Vgs): <3 Ω @ 10 V. Low on-resistance helps reduce conduction loss - ESD Rating: HBM ≥2000 V, provides good electrostatic discharge protection - Package: SOT-523, facilitating high-density PCB design and assembly

Applications

The 2N7002T is widely adopted in small-signal switching scenarios. Benefiting from its compact SOT-523 package and ESD-protected performance, it realizes reliable signal switching for space-constrained circuit designs.



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