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SL3404 N-Channel Enhancement MOSFET SOT-23

● High Current Capability: Id 5A for demanding applications.

● Efficient Operation: Low RDS(on) at Vgs 10V.

● Compact Design: SOT-23 for space-saving integration.

N-Channel Power MOSFET

CharacteristicSymbolMaxUnit
Drain-SourceVoltageBVDSS30V
Gate-SourceVoltageVGS20V
DrainCurrent(continuous)ID5A
DrainCurrent(pulsed)IDM18A
TotalDeviceDissipationPD1400mW
TA=25℃
JunctionTJ150
StorageTemperatureTstg-55to+150


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