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IRFR5305 P-channel Power MOSFET TO-252

● Green device available.

● Advanced high cell denity trench technology for ultra RDS(ON).

● Excellent package for good heat dissipation.

Our advantages:

China's manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. Slkor semiconductor electronic components can fully replace those of major international brands in 99% of applications without the need for testing verification. 

Description :

This p-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. it can be used in a wide variety of applications.

Features :

● Vs=-60V,l=-30A,RDS(ON)<35m Ω @VGS=-10V

● Low gate charge.

● Green device available.

● Advanced high cell denity trench technology for ultra RDS(ON).

● Excellent package for good heat dissipation.



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Title
Description
IRFR5305 TO-252.pdf
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Datasheet
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