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MMBT5551 NPN Bipolar Transistor SOT-23

This device is designed for general?purpose high?voltage amplifiers and gas discharge display drivers.

Our advantages:
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description:
This device is designed for general?purpose high?voltage amplifiers and gas discharge display drivers.

Features:

● Epitaxial planar die construction.

● Complementary PNP type available MMBT5401.

● also available in lead free version.

Applications:

Ideal fot medium power amplification and switching.

Quick reference data:

Symbol

Parameter

Conditions

Max

Unit

VCEO

collector-emitter voltage

open base

160

V

IC

collector current

0.6

A

VCEsat

collector-emitter

saturation voltage

IC = 50mA; IB = 10mA

0.5

V



Name
Title
Description
MMBT5551.pdf
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Datasheet
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