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Vceo:12V
Ic:100mA
Pd:150mW
VCE:-
fT:8GHz
Working temperature:150℃@(Tj)
Our advantages
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
Description
The BFS520 is a high-frequency low-noise transistor manufactured using planar NPN silicon epitaxial bipolar technology. It features high power gain and low noise characteristics. Packagedin an ultra- compact SOT-323 package, it is suitable for high-density surface-mount applications,primarily used in VHF, UHF, CATV, and other high-frequency low-noise amplifiers.
FEATURES
Collector-Emitter Voltage (Vceo): 12VCollector Current (Ic): 100mAPower Dissipation (Pd): 150mWTransition Frequency (fT): 8GHzWorking Temperature: Up to 150°C (Tj)
Application
Ideal for use in high-frequency circuits, RF amplifiers, and signal processing systems where rapid switching and stability are crucial. Its high-temperature tolerance makes it suitable for industrial and aerospace applications, providing durability in extreme conditions.
Support
If you need design/technical support, please let us know and fill inResponse FormWe will get back to you as soon as possible.
Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.












