Our Advantages
- Extremely high DC current gain for high‑sensitivity driving
- Multiple hFE grading options for precise circuit matching
- Compact SOT‑23 package ideal for high‑density SMT assembly
- Complementary to 2SB624 for push‑pull circuit designs
- Stable electrical performance over wide temperature range
- Low saturation voltage for high efficiency and low power loss
- Tape‑and‑reel packaging suitable for automated production
Description
2SD596 is an NPN bipolar transistor in SOT‑23 surface‑mount package. It features high DC current gain, medium current capability, and low saturation voltage, designed for amplification and switching in consumer electronics, audio equipment, and driver circuits. It is complementary to 2SB624 and offers multiple hFE bins for flexible design.
FEATURES
- NPN silicon transistor
- SOT‑23 surface mount package
- High DC current gain: hFE = 110–400 (5 grades available)
- Grades: DV1(110–180), DV2(135–220), DV3(170–270), DV4(200–320), DV5(250–400)
- Complementary to 2SB624
- VCBO = 30V, VCEO = 25V, VEBO = 5V
- Continuous collector current: IC = 700mA
- Power dissipation: PC = 200mW
- Transition frequency: fT = 170MHz (typ.)
- Low saturation voltage VCE(sat)
- Junction/storage temperature: −55℃ to +150℃
Applications
- Audio signal amplification
- General‑purpose switching circuits
- LED driver and indicator modules
- Portable electronic devices
- Consumer electronics and home appliances
- Sensor and interface control
- Medium‑power driver circuits