Our Advantages
- High continuous collector current up to 3A for strong power driving
- Excellent DC current gain for high-sensitivity control
- Ultra-low saturation voltage reduces power loss and improves efficiency
- Complementary with 2SB1412 for push‑pull circuit designs
- SOT‑89 package with good thermal dissipation
- Stable performance over wide temperature range
- Ideal for high‑power driver and switching applications
Description
2SD2150 is an NPN high‑current silicon transistor in SOT‑89 surface‑mount package. It features excellent current gain, low saturation voltage, and high current capability, designed for medium‑to‑high power switching, driver circuits, and amplification. It is complementary to 2SB1412 and widely used in power management, motor control, and audio driver systems.
FEATURES
- NPN high‑current transistor
- SOT‑89 surface mount package
- Excellent DC current gain characteristics
- Low collector‑emitter saturation voltage VCE(sat)
- Complementary to 2SB1412
- hFE grades: R(180–390), S(270–560)
- VCBO = 40V, VCEO = 20V, VEBO = 6V
- Continuous collector current: IC = 3A
- Power dissipation: PC = 500mW
- Transition frequency: fT = 290MHz (typ.)
- Junction/storage temperature: −55℃ to +150℃
Applications
- High‑current driver circuits
- Motor control and drive
- Power management and DC‑DC converters
- Audio power amplifier stages
- LED lighting driver modules
- Industrial control equipment
- Medium‑power switching circuits
- Battery‑powered power devices