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2SD2150-R NPN Bipolar Transistor SOT-89
2SD2150-R is an NPN high‑current silicon transistor in SOT‑89 surface‑mount package. It features excellent current‑gain characteristics and low saturation voltage, optimized for high‑current switching, power driving, and amplification. The R‑grade provides hFE from 180 to 390 for stable and reliable performance.
Our Advantages
- High continuous collector current up to 3A for heavy‑load driving
- Excellent DC current gain for high‑sensitivity control
- Ultra‑low saturation voltage reduces power loss and heat
- SOT‑89 package with good thermal performance
- Complementary to 2SB1412 for push‑pull circuit design
- Stable electrical performance over wide temperature range
- Tape‑and‑reel packaging for automated SMT assembly
Description
2SD2150-R is an NPN high‑current silicon transistor in SOT‑89 surface‑mount package. It features excellent current‑gain characteristics and low saturation voltage, optimized for high‑current switching, power driving, and amplification. The R‑grade provides hFE from 180 to 390 for stable and reliable performance.
FEATURES
- NPN high‑current transistor
- SOT‑89 surface mount package
- Excellent DC current gain characteristics
- Low collector‑emitter saturation voltage
- Complementary to 2SB1412
- hFE grade R: 180–390
- VCBO = 40V, VCEO = 20V, VEBO = 6V
- Continuous collector current: IC = 3A
- Power dissipation: PC = 500mW
- Transition frequency: fT = 290MHz (typ.)
- Junction/storage temperature: −55℃ to +150℃
Applications
- High‑current driver circuits
- Motor control and drive systems
- DC‑DC converters and power management
- Audio power amplifier stages
- LED lighting driver modules
- Industrial control equipment
- Medium‑power switching circuits
- Battery‑powered power devices
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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