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S9013W NPN Bipolar Transistor SOT-323
S9013W is an NPN general‑purpose silicon transistor in SOT‑323 surface‑mount package. It features high collector current, excellent hFE linearity, and low saturation voltage, widely used for general‑purpose signal amplification and switching in various electronic equipment. It is the complementary pair of S9012.
Our advantages
- High collector current up to 500mA for strong driving capability
- Excellent hFE linearity ensures stable amplification
- Compact SOT-323 package saves PCB space
- Complementary with S9012 for push‑pull circuit designs
- RoHS compliant, lead‑free and halogen‑free
- Wide operating temperature range for high reliability
- Tape‑and‑reel packaging suitable for automated SMT production
Description
S9013W is an NPN general‑purpose silicon transistor in SOT‑323 surface‑mount package. It features high collector current, excellent hFE linearity, and low saturation voltage, widely used for general‑purpose signal amplification and switching in various electronic equipment. It is the complementary pair of S9012.
FEATURES
- NPN general‑purpose silicon transistor
- SOT-323 miniature surface mount package
- High collector current capability
- Excellent hFE linearity
- Complementary to S9012
- hFE ranks: L(120–200), H(200–350), J(300–400)
- VCBO = 40V, VCEO = 25V, VEBO = 5V
- Continuous collector current: IC = 500mA
- Power dissipation: PC = 200mW
- Transition frequency: fT = 150MHz (typ.)
- Junction/storage temperature: −55℃ to +150℃
- RoHS, lead‑free, halogen‑free
Applications
- General‑purpose signal amplification
- Medium‑power switching circuits
- LED driver and indicator modules
- Portable consumer electronics
- Battery‑powered devices
- Home appliances and industrial controls
- High‑density SMT circuit designs
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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