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2SC3356DW-C NPN Bipolar Transistor SOT-363

2SC3356DW-C is a dual NPN silicon epitaxial planar transistor in SOT-363 surface‑mount package. It features low noise, high gain, and ultra‑high frequency characteristics, designed for low‑noise amplifiers in VHF, UHF, and CATV band applications. The C‑grade provides hFE from 125 to 250 for stable RF performance.

Our Advantages


  • Ultra-high frequency response up to 7GHz for excellent RF performance
  • Extremely low noise figure (NF ≤ 2dB) ideal for sensitive receivers
  • Dual NPN in SOT-363 package saves PCB space and cost
  • High power gain for efficient RF amplification
  • Multiple hFE bins for precise circuit matching
  • RoHS, halogen-free, and lead-free compliant
  • Wide temperature range for industrial and communication use

Description


2SC3356DW-C is a dual NPN silicon epitaxial planar transistor in SOT-363 surface‑mount package. It features low noise, high gain, and ultra‑high frequency characteristics, designed for low‑noise amplifiers in VHF, UHF, and CATV band applications. The C‑grade provides hFE from 125 to 250 for stable RF performance.

FEATURES


  • Dual NPN silicon epitaxial planar transistor
  • SOT-363 ultra-small surface mount package
  • Low noise and high gain
  • High power gain
  • hFE grade C: 125–250
  • Transition frequency: fT = 7GHz (typ.)
  • Noise figure: NF = 1–2dB
  • VCBO = 20V, VCEO = 12V, VEBO = 3V
  • Continuous collector current: IC = 100mA
  • Power dissipation: PC = 200mW
  • Junction/storage temperature: −50℃ to +150℃
  • RoHS, halogen-free, lead-free

Applications


  • VHF/UHF low-noise amplifiers
  • CATV signal amplification
  • High-frequency receiver frontends
  • RF communication modules
  • Portable wireless equipment
  • High-speed signal processing
  • Miniature RF circuit designs
Name
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Description
2SC3356DW-C SOT-363 ​.pdf
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Datasheet
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