Our Advantages
- Dual NPN+PNP independent transistors in one package
- Independent elements eliminate mutual interference
- Saves 50% PCB space and mounting cost
- High hFE for stable amplification
- Low saturation voltage & low leakage
- Mini SOT-363 ideal for high-density circuits
- Wide temperature range for industrial use
Description
UMZ1N is a silicon epitaxial planar dual transistor integrating one NPN (equivalent to 2SC2412K) and one PNP (equivalent to 2SA1037) in a single SOT-363 surface‑mount package. The two transistors work independently with no interference, providing high gain, low leakage, and stable performance for compact signal control and amplification circuits.
FEATURES
- Dual transistor: NPN + PNP in SOT-363
- Independent transistor elements
- Space‑saving and cost‑effective
- VCBO = ±60V, VCEO = ±50V
- IC = ±150mA
- PC = 150mW per channel
- hFE: 120–560
- fT: up to 180MHz
- Low saturation voltage
- Junction/storage temperature: −55℃ to +150℃
- Marking: Z1
Applications
- Compact signal amplification circuits
- Portable communication devices
- Audio and sensor interface modules
- High‑density consumer electronics
- Battery‑powered small equipment
- Logic level shifting & switching
- Industrial control and IoT modules