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UMZ1N Bipolar Transistor SOT-363

UMZ1N is a silicon epitaxial planar dual transistor integrating one NPN (equivalent to 2SC2412K) and one PNP (equivalent to 2SA1037) in a single SOT-363 surface‑mount package. The two transistors work independently with no interference, providing high gain, low leakage, and stable performance for compact signal control and amplification circuits.

Our Advantages


  • Dual NPN+PNP independent transistors in one package
  • Independent elements eliminate mutual interference
  • Saves 50% PCB space and mounting cost
  • High hFE for stable amplification
  • Low saturation voltage & low leakage
  • Mini SOT-363 ideal for high-density circuits
  • Wide temperature range for industrial use

Description


UMZ1N is a silicon epitaxial planar dual transistor integrating one NPN (equivalent to 2SC2412K) and one PNP (equivalent to 2SA1037) in a single SOT-363 surface‑mount package. The two transistors work independently with no interference, providing high gain, low leakage, and stable performance for compact signal control and amplification circuits.

FEATURES


  • Dual transistor: NPN + PNP in SOT-363
  • Independent transistor elements
  • Space‑saving and cost‑effective
  • VCBO = ±60V, VCEO = ±50V
  • IC = ±150mA
  • PC = 150mW per channel
  • hFE: 120–560
  • fT: up to 180MHz
  • Low saturation voltage
  • Junction/storage temperature: −55℃ to +150℃
  • Marking: Z1

Applications


  • Compact signal amplification circuits
  • Portable communication devices
  • Audio and sensor interface modules
  • High‑density consumer electronics
  • Battery‑powered small equipment
  • Logic level shifting & switching
  • Industrial control and IoT modules
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Description
UMZ1N SOT-363​.pdf
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Datasheet
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