Our Advantages
- Dual NPN + PNP transistors in one compact SOT-363 package
- Two isolated transistors avoid mutual interference
- Epitaxial planar structure ensures high reliability and consistency
- High and stable DC current gain for precise amplification
- Low saturation voltage and low leakage for high efficiency
- Miniature package saves PCB space and assembly cost
- Wide temperature range suitable for industrial applications
Description
BC846PN is a plastic-encapsulated dual transistor integrating one NPN (BC846W) and one PNP (BC856W) transistor in a single SOT-363 surface‑mount package. It features epitaxial die construction, isolated channels, and excellent electrical performance, ideal for small‑signal amplification, switching, and level‑shift circuits in compact electronic devices.
FEATURES
- Dual transistor: NPN + PNP in SOT-363
- Epitaxial die construction
- Two isolated transistors
- Marking: BB
- NPN: VCBO=80V, VCEO=65V, IC=100mA
- PNP: VCBO=-80V, VCEO=-65V, IC=-100mA
- Power dissipation: PC=200mW per channel
- DC current gain: hFE up to 475
- Transition frequency: fT=100MHz (typ.)
- Low saturation voltage & low leakage current
- Junction/storage temperature: −55℃ to +150℃
Applications
- Small‑signal amplification circuits
- Low‑power switching control
- Logic level shifting
- Audio and sensor interfaces
- Portable consumer electronics
- High‑density PCB modules
- Industrial and battery‑powered devices