Our Advantages
- Ultra-high DC current gain for strong amplification performance
- Standard SOT-23 package ideal for automatic assembly
- Low saturation voltage and low leakage for high efficiency
- Wide temperature range for stable operation
- Miniature size saves PCB space
- Low noise figure for high-sensitivity circuits
- RoHS compliant for global applications
Description
BC860C is a PNP silicon epitaxial planar transistor in SOT-23 surface-mount package. It features ultra-high hFE, low noise, and excellent linearity, designed for general-purpose switching and signal amplification in compact consumer electronics and industrial circuits.
FEATURES
- PNP silicon epitaxial transistor
- SOT-23 surface-mount package
- For switching and amplifier applications
- VCBO = −50V, VCEO = −45V, VEBO = −5V
- DC current gain (hFE): 420–800 (C rank)
- Continuous collector current: IC = −100mA
- Peak collector current: ICM = −200mA
- Power dissipation: Ptot = 200mW
- Transition frequency: fT = 100MHz (typ.)
- Low noise figure: NF = 4dB
- Operating temperature: −65℃ to +150℃
- Marking: 4G
Applications
- General-purpose signal amplification
- Low-power switching control
- Audio and sensor interface circuits
- Portable consumer electronics
- Battery-powered devices
- Industrial control modules
- High-density SMT PCB designs