Our Advantages
- Ultra-high frequency up to 9GHz for wideband RF applications
- Extremely low noise figure for high-sensitivity reception
- High power gain and wide dynamic range
- Standard SOT-23 package for easy mass assembly
- Low capacitance and low leakage for excellent RF performance
- Stable linearity and high reliability
- Wide temperature range for communication equipment
Description
BFR540 is an NPN silicon epitaxial low-noise microwave transistor in SOT-23 surface‑mount package. It features high gain, wide bandwidth, and low noise, specially designed for UHF, VHF, CATV, and radar‑related high‑frequency low‑noise amplification systems.
FEATURES
- NPN microwave low-noise silicon epitaxial transistor
- SOT-23 surface mount package
- Transition frequency: fT = 9GHz (typ.)
- Low noise figure: NF = 1.3–2.4dB
- High power gain: |S21| up to 13dB
- DC current gain: hFE = 60–250
- VCBO = 20V, VCEO = 12V, VEBO = 2.5V
- Continuous collector current: IC = 120mA
- Power dissipation: PT = 500mW
- Junction/storage temperature: −65℃ to +150℃
- Marking: 33W
Applications
- VHF/UHF low-noise amplifiers
- CATV and satellite TV tuners
- Radar detectors and wireless alarms
- RF communication modules
- Optical fiber transmission repeaters
- High-frequency broadband signal amplifiers
- Portable wireless equipment