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SL160N03Q N-Channel Enhancement MOSFET PDFN-8L(5x6)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Description
The SL160N03Q N-Channel Enhancement MOSFET PDFN-8L(5x6) is designed for demanding applications where efficiency and reliability are crucial. This MOSFET boasts a maximum drain-source voltage of 30V and a substantial continuous drain current capability of 160A, making it ideal for high-power switching tasks.
Features
● VDS=30V，ID=160A
● RDS（ON）TYP = 1.6mΩ @VGS =10V
● RDS（ON）TYP = 2.3mΩ @VGS =4.5V
● Very Low On-resistance RDS(ON)
● LowCrss
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability
Application
● PWM Application
● Load Switch
● Power Management
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Support
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Longevity
The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.
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ShenzhenSLKORMicroSemiconCo., Ltd.
SLKOR's product lines include discrete devices, etc., diodes, transistors, power devices; and integrated circuit chips, etc., linear regulators, DC/ DC chips, interface chips, Hall sensors, ADCs, and BMS... We have years of accumulated technology on dedicated semiconductor.
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