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SL4606A N+P-Channel Enhancement MOSFET SOT-8

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Description
This N-Channel MOSFET maximum Drain-Source Voltage (Vdss) of 30V, making it ideal for a wide range of electronic applications. With a maximum Continuous Drain Current (Id) of 6A and a Power Dissipation (Pd) of 2W, it ensures efficient power handling and thermal stability. The low RDS(on) of 19mΩ at Vgs of 10V and Id of 5.6A ensures minimal conduction losses, while the Gate-Source Threshold Voltage (Vgs(th)) is just 1V at 250μA, facilitating easy drive and control.

Features

● High power and current handing capability

● Lead free product is acquired

● Surface mount package


Application

● Battery protection 

● Load switch 

● Power management


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