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● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.
The SL4407A is a P-Channel power MOSFET. It features a drain-source breakdown voltage of -30 V and delivers large-current switching capability. The device achieves ultra-low on-state resistance with different gate-source drive voltages, together with optimized gate charge characteristics, enabling highly-efficient power switching performance for power management applications.
- P-Channel power MOSFET, designed for high-current power switching applications - Drain-Source Breakdown Voltage (BV<sub>DSS</sub>): -30 V, supports reliable negative-voltage switching operation - On-state Resistance (R<sub>DS(on)</sub> @ Vgs, Id): 13 mΩ Max @ VGS = -10 V, ID = -10 A; 17 mΩ Max @ VGS = -6.0 V, ID = -8 A; 27 mΩ Max @ VGS = -4.5 V, ID = -8 A. Ultra-low on-resistance minimizes conduction losses - Gate Threshold Voltage (V<sub>GS(th)</sub>): 9.0-11 V @ ID =-12 A - Total Gate Charge (Qg): 40.1 nC, optimized gate charge improves switching performance - Low zero gate-voltage drain current and gate-body leakage current reduce static power consumption
The SL4407A is widely adopted in high-current power-switching scenarios. Benefiting from its ultra-low on-state resistance and large-current handling capability, it achieves high-efficiency power conversion for power management, load switch and battery-powered circuit designs.
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