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IRLML6401 P-Channel Power MOSFET SOT-23

● High dense cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum

● DC current capability

Our advantages

Housed in the SOT-23 package, this device features compact form factor and high performance, well-suited for low-voltage applications.

Description


SL3409 is a P-Channel low-voltage MOSFET featuring 30V drain-source voltage (Vdss) and 2.2A continuous drain current (Id). In addition, it delivers an on-state resistance (RDS(on)@Vgs,Id) of 130 mΩ under the test conditions of 10V and 2.2A. Its gate-source threshold voltage (Vgs(th)@Id) is 2.4 V @ 250 μA.


FEATURE

● High dense cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum

● DC current capability

APPLICATION

● Load Switch for Portable Devices

● DC/DC Converter


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Longevity

 

The Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our executive Management Team. View ourlongevity programhere.

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